完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.author | 張守進 | en_US |
| dc.contributor.author | CHANG SHOOU-JINN | en_US |
| dc.date.accessioned | 2014-12-13T10:48:24Z | - |
| dc.date.available | 2014-12-13T10:48:24Z | - |
| dc.date.issued | 2000 | en_US |
| dc.identifier.govdoc | NSC89-2215-E009-018 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/101337 | - |
| dc.identifier.uri | https://www.grb.gov.tw/search/planDetail?id=542521&docId=99694 | en_US |
| dc.description.sponsorship | 行政院國家科學委員會 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.subject | 氮化鎵 | zh_TW |
| dc.subject | 場效電晶體 | zh_TW |
| dc.subject | 光電元件 | zh_TW |
| dc.subject | 微波元件 | zh_TW |
| dc.subject | GaN | en_US |
| dc.subject | Field effect transistor | en_US |
| dc.subject | Optoelectronic device | en_US |
| dc.subject | Microwave device | en_US |
| dc.title | GaN光電及微波元件之研製---子計畫III：氮化鎵場效電晶體之研製 (I) | zh_TW |
| dc.title | The Study of GaN-Based Field Effect Transistor (I) | en_US |
| dc.type | Plan | en_US |
| dc.contributor.department | 交通大學光電工程研究所 | zh_TW |
| 顯示於類別： | 研究計畫 | |
