标题: | The impact of gate-oxide breakdown on common-source-amplifiers with diode-connected active load in low-voltage CMOS processes |
作者: | Chen, Jung-Sheng Ker, Ming-Dou 电机学院 College of Electrical and Computer Engineering |
关键字: | analog integrated circuit;common-source amplifier;dielectric breakdown;gate-oxide reliability;hard breakdown;soft breakdown |
公开日期: | 1-十一月-2007 |
摘要: | The influence of gate-oxide reliability on common-source amplifiers with diode-connected active load is investigated with the nonstacked and stacked structures under analog application in a 130-nm low-voltage CMOS process. The test. conditions of this work include the dc stress, ac stress with dc offset, and large-signal transition stress under different frequencies and signals. After overstresses, the small-signal parameters, such as small-signal gain, unity-gain frequency, phase margin, and output dc voltage levels, are measured to verify the impact of gate-oxide reliability on circuit performances of the common-source amplifiers with diode-connected active load. The small-signal parameters of the common-source amplifier with the nonstacked diode-connected active-load structure are strongly degraded than that with the stacked diode-connected active-load structure due to a gate-oxide breakdown under analog and digital applications. The common-source amplifiers with diode-connected active load are not functionally operational under digital application due to the gate-oxide breakdown. The impact of soft and hard gate-oxide breakdowns on the common-source amplifiers with nonstacked and stacked diode-connected active-load structures has been analyzed and discussed. The hard breakdown has more serious impact on the common-source amplifiers with diode-connected active load. |
URI: | http://dx.doi.org/10.1109/TED.2007.906938 http://hdl.handle.net/11536/10142 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2007.906938 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 54 |
Issue: | 11 |
起始页: | 2860 |
结束页: | 2870 |
显示于类别: | Articles |
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