金屬閘極/高介電係數材料互補式金氧半場效電晶體在45到22奈米世代之應用(II)

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DC Field	Value	Language
dc.contributor.author	荊鳳德	en_US
dc.contributor.author	CHIN ALBERT	en_US
dc.date.accessioned	2014-12-13T10:48:59Z	-
dc.date.available	2014-12-13T10:48:59Z	-
dc.date.issued	2009	en_US
dc.identifier.govdoc	NSC98-2120-M009-005	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/101497	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=1892668&docId=313302	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	金屬閘極/高介電係數材料互補式金氧半場效電晶體在45到22奈米世代之應用(II)	zh_TW
dc.title	Metal-Gate/High-K Cmosfets for 45 to 22 Nm Technology Nodes (II)	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系及電子研究所	zh_TW
Appears in Collections:	Research Plans

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