金屬閘極/高介電係數材料互補式金氧半場效電晶體在45到22奈米世代之應用(III)

Files

992120M009002.PDF (1.37 MB)

Date

Authors

Keywords

高介電係數金屬閘極等效氧化層厚度場效電晶體臨界電壓 , high-k dielectric , metal-gate , EOT , MOSFET , threshold voltage , Vt

URI

https://www.grb.gov.tw/search/planDetail?id=2149452&docId=346056
https://ir.lib.nycu.edu.tw/handle/11536/100666

Collections

研究計畫;;Research Plans