標題: 金屬閘極/高介電係數材料互補式金氧半場效電晶體在45到22奈米世代之應用(II)
Metal-Gate/High-K Cmosfets for 45 to 22 Nm Technology Nodes (II)
作者: 荊鳳德
CHIN ALBERT
國立交通大學電子工程學系及電子研究所
公開日期: 2009
官方說明文件#: NSC98-2120-M009-005
URI: http://hdl.handle.net/11536/101497
https://www.grb.gov.tw/search/planDetail?id=1892668&docId=313302
Appears in Collections:Research Plans


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