高介電材料結合SONOS 之新穎非揮發性記憶體元件製作與物理特性研究(II)

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DC Field	Value	Language
dc.contributor.author	施敏	en_US
dc.contributor.author	SZE SIMON MIN	en_US
dc.date.accessioned	2014-12-13T10:49:40Z	-
dc.date.available	2014-12-13T10:49:40Z	-
dc.date.issued	2009	en_US
dc.identifier.govdoc	NSC98-2221-E009-002	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/101724	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=1903569&docId=315422	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	高介電材料結合SONOS 之新穎非揮發性記憶體元件製作與物理特性研究(II)	zh_TW
dc.title	High-K Materials Combined with SONOS Nonvolatile Memory Device Fabrication and Physical Characteristics Research(II)	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系及電子研究所	zh_TW
Appears in Collections:	Research Plans

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