| 標題: | 磊晶高品質鍺與砷化銦鎵異質通道於矽基板之高速金氧半場效電晶體 High-Speed MOSFET with High-Quality Ge and Ingaas Epitaxial Hetero-Channels on Si Substrates |
| 作者: | 簡昭欣 Chien Chao-Hsin 國立交通大學電子工程學系及電子研究所 |
| 公開日期: | 2009 |
| 官方說明文件#: | NSC98-2221-E009-173-MY3 |
| URI: | http://hdl.handle.net/11536/101752 https://www.grb.gov.tw/search/planDetail?id=1902985&docId=315300 |
| Appears in Collections: | Research Plans |
