以氫化物氣相磊晶法開發III-V族氮化物基板( II )

Full metadata record

DC Field	Value	Language
dc.contributor.author	李威儀	en_US
dc.contributor.author	LEE WEI-I	en_US
dc.date.accessioned	2014-12-13T10:49:53Z	-
dc.date.available	2014-12-13T10:49:53Z	-
dc.date.issued	2008	en_US
dc.identifier.govdoc	NSC97-2622-E009-002	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/101884	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=1630473&docId=278550	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	以氫化物氣相磊晶法開發III-V族氮化物基板( II )	zh_TW
dc.title	III-V Group Nitride Base Substrates Developed by Hydride Vapor Phase Epitaxy(II)	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子物理學系(所)	zh_TW
Appears in Collections:	Research Plans

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