電漿製程對N-型及P-型金氧半場效電晶體之損傷機制研究

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DC Field	Value	Language
dc.contributor.author	崔秉鉞	en_US
dc.contributor.author	Bing-YueTsui	en_US
dc.date.accessioned	2014-12-13T10:49:54Z	-
dc.date.available	2014-12-13T10:49:54Z	-
dc.date.issued	2000	en_US
dc.identifier.govdoc	NSC89-2215-E009-074	zh_TW
dc.identifier.uri	http://hdl.handle.net/11536/101903	-
dc.identifier.uri	https://www.grb.gov.tw/search/planDetail?id=573684&docId=107118	en_US
dc.description.sponsorship	行政院國家科學委員會	zh_TW
dc.language.iso	zh_TW	en_US
dc.title	電漿製程對N-型及P-型金氧半場效電晶體之損傷機制研究	zh_TW
dc.title	Mechanism of Plasma Process Induced Damage on N-type and P-type MOSFET	en_US
dc.type	Plan	en_US
dc.contributor.department	國立交通大學電子工程學系	zh_TW
Appears in Collections:	Research Plans

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