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dc.contributor.authorLiu, W.-R.en_US
dc.contributor.authorHsieh, W. F.en_US
dc.contributor.authorHsu, C.-H.en_US
dc.contributor.authorLiang, Keng S.en_US
dc.contributor.authorChien, F. S. -S.en_US
dc.date.accessioned2014-12-08T15:13:17Z-
dc.date.available2014-12-08T15:13:17Z-
dc.date.issued2007-10-01en_US
dc.identifier.issn0021-8898en_US
dc.identifier.urihttp://dx.doi.org/10.1107/S0021889807033997en_US
dc.identifier.urihttp://hdl.handle.net/11536/10264-
dc.description.abstractThe structures of high-quality ZnO epitaxial films grown by pulsed-laser deposition on sapphire ( 0001) without an oxygen gas flow were investigated by X-ray diffraction and transmission electron microscopy. The great disparity of X-ray diffraction line widths between the normal and in-plane reflections reveals the specific threading dislocation geometry of ZnO. Most threading dislocations are pure edge dislocations. From a combination of scattering and microscopic results, it is found that threading dislocations are not uniformly distributed in the ZnO films, but the films consist of columnar epitaxial cores surrounded by annular regions of edge threading dislocations in large density. The local surface morphology and capacitance signal obtained from atomic force and scanning capacitance microscopes indicate that the aggregation of threading dislocations leads to high interface traps at the annular regions.en_US
dc.language.isoen_USen_US
dc.titleThreading dislocations in domain-matching epitaxial films of ZnOen_US
dc.typeArticleen_US
dc.identifier.doi10.1107/S0021889807033997en_US
dc.identifier.journalJOURNAL OF APPLIED CRYSTALLOGRAPHYen_US
dc.citation.volume40en_US
dc.citation.issueen_US
dc.citation.spage924en_US
dc.citation.epage930en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000249281700014-
dc.citation.woscount22-
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