A program-erasable high-k Hf0.3N0.2O0.5 MIS capacitor with good retention

標題:	A program-erasable high-k Hf0.3N0.2O0.5 MIS capacitor with good retention
作者:	Yang, H. J. Chin, Albert Chen, W. J. Cheng, C. F. Huang, W. L. Hsieh, I. J. McAlister, S. P. 奈米科技中心 Center for Nanoscience and Technology
關鍵字:	capacitor;dynamic random access memory (DRAM);erase;high-k;nonvolatile memory (NVM);program
公開日期:	1-十月-2007
摘要:	We describe a programmable-erasable MIS capacitor with a single high-kappa Hf0.3N0.2O0.5 dielectric layer. This device showed a capacitance density of similar to 6.6 fF/mu m(2), low program and erase voltages of +5 and -5 V, respectively, and a large Delta V-fb memory window of 1.5 V. In addition, the 25 degrees C data retention was good, as indicated by program and erase decay rates of only 2 and 6.2 mV/dec, respectively. Such device retention is attributed to the deep trapping level of 1.05 eV in the Hf0.3N0.2O0.5.
URI:	http://dx.doi.org/10.1109/LED.2007.905375 http://hdl.handle.net/11536/10280
ISSN:	0741-3106
DOI:	10.1109/LED.2007.905375
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	28
Issue:	10
起始頁:	913
結束頁:	915
顯示於類別：	期刊論文

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