標題: | Injection-locked Galnp/GaAs HBT frequency divider with stacked transformers |
作者: | Wei, Hung-Ju Meng, Chinchun Chang, Yuwen Huang, Guo-Wei 電信工程研究所 Institute of Communications Engineering |
關鍵字: | injection-locked frequency divider (ILFD);stac ked transformer;GalnP/GaAs;heterojunction bipolar transistor |
公開日期: | 1-十月-2007 |
摘要: | The first integrated GaInP/GaAs heterojunction bipolar transistor (HBT) injection-locked frequecy divider (ILFD) with the stacked transformers is demonstrated around 10 GHz. The stacked transformers formed by only two metal layers provide the inductive coupling in the cross feedback and separate biasing for base and collector to allow for the larger output swing in the LC tank and obtaining wide locking range. Under the supply voltage of 5 V and core power consumption of 20.5 mV the locking range is 7.8% of the center operating frequency. The chip size of the entire ILFD including probing pads is 1.0 x 1.0 mm(2). (c) 2007 Wiley Periodicals. Inc. |
URI: | http://dx.doi.org/10.1002/mop.22737 http://hdl.handle.net/11536/10294 |
ISSN: | 0895-2477 |
DOI: | 10.1002/mop.22737 |
期刊: | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS |
Volume: | 49 |
Issue: | 10 |
起始頁: | 2602 |
結束頁: | 2605 |
顯示於類別: | 期刊論文 |