標題: | High-speed divide-by-4/5 prescalers with merged and gates using gainp/gaas hbt and sige hbt technolmes |
作者: | Wei, Hung-Ju Meng, Chinchun Chang, YuWen Lin, Yi-Chen Huan, Guo-Wei 電信工程研究所 Institute of Communications Engineering |
關鍵字: | heterojunction bipolar transistor (HBT);GalnP/GaAs;SiGe;dual-modulus;divide-by-4/5;prescaler;emitter-couple logic (ECL) |
公開日期: | 1-六月-2008 |
摘要: | This paper demonstrates the divide-by-4/5 prescalers with merged AND gates in 2-mu m GaInP/GaAs heterojunction bipolar transistor (HBT) and 0.35-mu m SiGe HBT technologies. By biasing the HBT near the peak transit-time frequency (f(T)), the maxinnun operating frequency of a D-type flip-flop can be promoted. At the supply, voltage of 5 the GaInP/GaAs prescaler operates from 30 MHz to 5.2 GHz, and the SiGe prescaler has the higher-speed performance of 1-8 GHz at the cost of power consumption. (c) 2008 Wiley Periodicals, Inc. |
URI: | http://dx.doi.org/10.1002/mop.23407 http://hdl.handle.net/11536/8792 |
ISSN: | 0895-2477 |
DOI: | 10.1002/mop.23407 |
期刊: | MICROWAVE AND OPTICAL TECHNOLOGY LETTERS |
Volume: | 50 |
Issue: | 6 |
起始頁: | 1498 |
結束頁: | 1500 |
顯示於類別: | 期刊論文 |