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dc.contributor.authorLiu, Shiu-Jenen_US
dc.contributor.authorChen, Shyh-Fenen_US
dc.contributor.authorJuang, Jenh-Yihen_US
dc.contributor.authorLin, Jiunn-Yunen_US
dc.contributor.authorWu, Kaung-Hsiungen_US
dc.contributor.authorUen, Tseng-Mingen_US
dc.contributor.authorGou, Yi-Shunen_US
dc.date.accessioned2014-12-08T15:13:19Z-
dc.date.available2014-12-08T15:13:19Z-
dc.date.issued2007-10-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.46.6621en_US
dc.identifier.urihttp://hdl.handle.net/11536/10295-
dc.description.abstractWe prepared La2/3Ca1/3MnO3-y films with various oxygen contents on SrTiO3 substrates and measured the temperature-dependent resistivity of the manganite films under tensile stress due to the lattice mismatch between manganites and single-crystal substrates. The effect of oxygen vacancies on the transport properties of the films was investigated. The experimental results reveal that the dependence of temperature on the resistivity of fully oxygenated films can be attributed to the adiabatic small-polaron conduction and unconventional one-magnon scattering at temperatures above and far below the insulator-metal (I-M) transition temperature, respectively. However, for highly oxygen -deficient films, the temperature-dependent resistivity can be ascribed to Mott's variable-range-hopping and small polaron metallic conduction at temperatures above and far below the I-M transition temperature, respectively.en_US
dc.language.isoen_USen_US
dc.subjectcolossal magnetoresistanceen_US
dc.subjectmanganitesen_US
dc.subjectinsulator-metal transitionen_US
dc.subjectpulsed-laser depositionen_US
dc.subjectsmall polaronen_US
dc.subjectvariable range hoppingen_US
dc.titleInfluence of oxygen vacancies on transport properties of La2/3Ca1/3MnO3-y films grown on SrTiO3 substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.46.6621en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERSen_US
dc.citation.volume46en_US
dc.citation.issue10Aen_US
dc.citation.spage6621en_US
dc.citation.epage6625en_US
dc.contributor.department物理研究所zh_TW
dc.contributor.departmentInstitute of Physicsen_US
dc.identifier.wosnumberWOS:000250266800032-
dc.citation.woscount3-
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