標題: The effects of hydrogen plasma pretreatment on the formation of vertically aligned carbon nanotubes
作者: Wang, Wen-Pin
Wen, Hua-Chiang
Jian, Sheng-Rui
Juang, Jenh-Yih
Lai, Yi-Shao
Tsai, Chien-Huang
Wu, Wen-Fa
Chen, Kuan-Ting
Chou, Chang-Pin
機械工程學系
電子物理學系
Department of Mechanical Engineering
Department of Electrophysics
關鍵字: carbon nanotubes;H-2 pretreatment;Raman spectroscopy;scanning electron microscopy;transmission electron microscopy
公開日期: 30-九月-2007
摘要: The effects of H-2 plasma pretreatment on the growth of vertically aligned carbon nanotubes (CNTs) by varying the flow rate of the precursor gas mixture during microwave plasma chemical vapor deposition (MPCVD) have been investigated in this study. Gas mixture of H-2 and CH4 with a ratio of 9:1 was used as the precursor for synthesizing CNTs on Ni-coated TiN/Si(1 0 0) substrates. The structure and composition of Ni catalyst nanoparticles were investigated by using scanning electron microscopy (SEM) and cross-sectional transmission electron microscopy (XTEM). Results indicated that, by manipulating the morphology and density of the Ni catalyst nanoparticles via changing the flow rate of the precursor gas mixture, the vertically aligned CNTs could be effectively controlled. The Raman results also indicated that the intensity ratio of the G and D bands (I-D/I-G) is decreased with increasing gas flow rate. TEM results suggest H-2 plasma pretreatment can effectively reduce the amorphous carbon and carbonaceous particles and. thus. is playing a crucial role in modifying the obtained CNTs structures. (c) 2007 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.apsusc.2007.05.060
http://hdl.handle.net/11536/10304
ISSN: 0169-4332
DOI: 10.1016/j.apsusc.2007.05.060
期刊: APPLIED SURFACE SCIENCE
Volume: 253
Issue: 23
起始頁: 9248
結束頁: 9253
顯示於類別:期刊論文


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