標題: The influences of H-2 plasma pretreatment on the growth of vertically aligned carbon nanotubes by microwave plasma chemical vapor deposition
作者: Jian, Sheng-Rui
Chen, Yuan-Tsung
Wang, Chih-Feng
Wen, Hua-Chiang
Chiu, Wei-Ming
Yang, Chu-Shou
電子物理學系
Department of Electrophysics
關鍵字: multiwalled carbon nanotubes;H-2 pretreatment;Raman spectroscopy;scanning electron microscopy;transmission electron microscopy
公開日期: 1-六月-2008
摘要: The effects of H-2 flow rate during plasma pretreatment on synthesizing the multiwalled carbon nanotubes (MWCNTs) by using the microwave plasma chemical vapor deposition are investigated in this study. A H-2 and CH4 gas mixture with a 9:1 ratio was used as a precursor for the synthesis of MWCNT on Ni-coated TaN/Si(100) substrates. The structure and composition of Ni catalyst nanoparticles were investigated using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The present findings showed that denser Ni catalyst nanoparticles and more vertically aligned MWCNTs could be effectively achieved at higher flow rates. From Raman results, we found that the intensity ratio of G and D bands (I-D/I-G) decreases with an increasing flow rate. In addition, TEM results suggest that H-2 plasma pretreatment can effectively reduce the amorphous carbon and carbonaceous particles. As a result, the pretreatment plays a crucial role in modifying the obtained MWCNTs structures.
URI: http://dx.doi.org/10.1007/s11671-008-9141-5
http://hdl.handle.net/11536/8774
ISSN: 1931-7573
DOI: 10.1007/s11671-008-9141-5
期刊: NANOSCALE RESEARCH LETTERS
Volume: 3
Issue: 6
起始頁: 230
結束頁: 235
顯示於類別:期刊論文


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