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dc.contributor.authorJian, Sheng-Ruien_US
dc.contributor.authorChen, Yuan-Tsungen_US
dc.contributor.authorWang, Chih-Fengen_US
dc.contributor.authorWen, Hua-Chiangen_US
dc.contributor.authorChiu, Wei-Mingen_US
dc.contributor.authorYang, Chu-Shouen_US
dc.date.accessioned2014-12-08T15:11:26Z-
dc.date.available2014-12-08T15:11:26Z-
dc.date.issued2008-06-01en_US
dc.identifier.issn1931-7573en_US
dc.identifier.urihttp://dx.doi.org/10.1007/s11671-008-9141-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/8774-
dc.description.abstractThe effects of H-2 flow rate during plasma pretreatment on synthesizing the multiwalled carbon nanotubes (MWCNTs) by using the microwave plasma chemical vapor deposition are investigated in this study. A H-2 and CH4 gas mixture with a 9:1 ratio was used as a precursor for the synthesis of MWCNT on Ni-coated TaN/Si(100) substrates. The structure and composition of Ni catalyst nanoparticles were investigated using scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The present findings showed that denser Ni catalyst nanoparticles and more vertically aligned MWCNTs could be effectively achieved at higher flow rates. From Raman results, we found that the intensity ratio of G and D bands (I-D/I-G) decreases with an increasing flow rate. In addition, TEM results suggest that H-2 plasma pretreatment can effectively reduce the amorphous carbon and carbonaceous particles. As a result, the pretreatment plays a crucial role in modifying the obtained MWCNTs structures.en_US
dc.language.isoen_USen_US
dc.subjectmultiwalled carbon nanotubesen_US
dc.subjectH-2 pretreatmenten_US
dc.subjectRaman spectroscopyen_US
dc.subjectscanning electron microscopyen_US
dc.subjecttransmission electron microscopyen_US
dc.titleThe influences of H-2 plasma pretreatment on the growth of vertically aligned carbon nanotubes by microwave plasma chemical vapor depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1007/s11671-008-9141-5en_US
dc.identifier.journalNANOSCALE RESEARCH LETTERSen_US
dc.citation.volume3en_US
dc.citation.issue6en_US
dc.citation.spage230en_US
dc.citation.epage235en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000257381600005-
dc.citation.woscount10-
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