Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 侯拓宏 | en_US |
| dc.contributor.author | 吳仕傑 | en_US |
| dc.date.accessioned | 2014-12-16T06:11:55Z | - |
| dc.date.available | 2014-12-16T06:11:55Z | - |
| dc.date.issued | 2013-05-16 | en_US |
| dc.identifier.govdoc | H01L027/24 | zh_TW |
| dc.identifier.govdoc | G11C008/12 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103279 | - |
| dc.description.abstract | 本發明提供一種多位元電阻切換記憶體元件及陣列。每一記憶體元件可形成多個導通路徑,導通路徑彼此獨立,且任一導通路徑之電阻可為高電阻狀態或低電阻狀態,而形成多位元電阻切換記憶體元件。利用多位元電阻切換記憶體元件排列而成之陣列,可提供結構簡單、高密度、高效能以及低成本的記憶體裝置。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 多位元電阻切換記憶體元件與陣列 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201320323 | zh_TW |
| Appears in Collections: | Patents | |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.
Loading...