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dc.contributor.authorChen, Wei-Renen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorHsieh, Yen-Tingen_US
dc.contributor.authorSze, Simon M.en_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2014-12-08T15:13:22Z-
dc.date.available2014-12-08T15:13:22Z-
dc.date.issued2007-09-03en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2779931en_US
dc.identifier.urihttp://hdl.handle.net/11536/10342-
dc.description.abstractThe authors proposed a formation mechanism of Ge nanocrystals embedded in the dielectric by using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 films for nonvolatile memory application in this study. Because of internal competition reaction, this formation process reduced the thermal budget and eliminated the use of high pressure H-2 treatment or steam process. In this research, the preannealing capping oxide step is a critical process for nonvolatile memory effect. Transmission electron microscope shows the shape and density of nanocrystals in the dielectric. Moreover, the memory structure with Ge nanocrystal embedded in SiNx has better charge storage ability and data retention than Ge nanocrystal embedded in SiOx. (C) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titleFormation of Ge nanocrystals using Si1.33Ge0.67O2 and Si2.67Ge1.33N2 film for nonvolatile memory applicationen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2779931en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume91en_US
dc.citation.issue10en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000249322900027-
dc.citation.woscount15-
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