Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 冉曉雯 | en_US |
dc.contributor.author | 蔡娟娟 | en_US |
dc.contributor.author | 陳蔚宗 | en_US |
dc.contributor.author | 薛琇文 | en_US |
dc.date.accessioned | 2014-12-16T06:12:08Z | - |
dc.date.available | 2014-12-16T06:12:08Z | - |
dc.date.issued | 2012-05-16 | en_US |
dc.identifier.govdoc | H01L029/786 | zh_TW |
dc.identifier.govdoc | H01L021/336 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/103451 | - |
dc.description.abstract | 一種金屬氧化物薄膜電晶體結構,包含:一閘極;一設於該閘極上的介電層;一設於該介電層上之主動層;分別設於該主動層上相間隔之一源極與一汲極;以及一臨界電壓調製層,其係直接接觸於該電晶體結構的背通道,該臨界電壓調製層與該主動層具有功函數差。藉此,本發明係使用功函數差進行元件之臨界電壓的調製。 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | 金屬氧化物薄膜電晶體結構及其製造方法 | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | TWN | zh_TW |
dc.citation.patentnumber | 201220504 | zh_TW |
Appears in Collections: | Patents |
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