Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張翼 | en_US |
| dc.contributor.author | 許恒通 | en_US |
| dc.date.accessioned | 2014-12-16T06:12:09Z | - |
| dc.date.available | 2014-12-16T06:12:09Z | - |
| dc.date.issued | 2012-05-01 | en_US |
| dc.identifier.govdoc | H01L021/8232 | zh_TW |
| dc.identifier.govdoc | H01L021/335 | zh_TW |
| dc.identifier.govdoc | H01L027/085 | zh_TW |
| dc.identifier.govdoc | H01L029/778 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103461 | - |
| dc.description.abstract | 一種串接式之高電子遷移率電晶體元件的製造方法,該方法係利用製程中定義出多個高電子遷移率電晶體,並以內連接的方式將所述高電子遷移率電晶體進行串接。因此,在等效電路上可達到累加電壓的效果,故可形成具有高崩潰電壓特性的元件。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 串接式之高電子遷移率電晶體元件及其製造方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201218319 | zh_TW |
| Appears in Collections: | Patents | |
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