Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 曾俊元 | en_US |
| dc.contributor.author | 王聖裕 | en_US |
| dc.contributor.author | 蔡承翰 | en_US |
| dc.date.accessioned | 2014-12-16T06:12:18Z | - |
| dc.date.available | 2014-12-16T06:12:18Z | - |
| dc.date.issued | 2011-07-16 | en_US |
| dc.identifier.govdoc | H01L027/24 | zh_TW |
| dc.identifier.govdoc | H01L045/00 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103568 | - |
| dc.description.abstract | 本發明提供一種電阻式隨存記憶體之製作方法，包含：(a)於一基材上形成一第一電極；(b)於該第一電極上以一175℃至225℃的製程溫度形成一氧化鋯之可變電阻層；及(c)於該可變電阻層上形成一Ti的第二電極。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 電阻式隨存記憶體之製作方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201125114 | zh_TW |
| Appears in Collections: | Patents | |
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