Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張翼 | en_US |
| dc.contributor.author | 郭建億 | en_US |
| dc.contributor.author | 張俊彥 | en_US |
| dc.date.accessioned | 2014-12-16T06:12:20Z | - |
| dc.date.available | 2014-12-16T06:12:20Z | - |
| dc.date.issued | 2011-05-01 | en_US |
| dc.identifier.govdoc | H01L029/778 | zh_TW |
| dc.identifier.govdoc | H01L021/338 | zh_TW |
| dc.identifier.govdoc | H01L021/28 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103605 | - |
| dc.description.abstract | 使用重摻雜之磊晶矽鍺材料或具有不同銦含量之磊晶砷化銦鎵材料來形成三五族半導體元件之源極與汲極，以透過矽鍺材料或砷化銦鎵材料對於三五族半導體元件通道所施加的應力來增加電子移動率。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 三五族半導體元件之歐姆接觸電極及其製造方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201115735 | zh_TW |
| Appears in Collections: | Patents | |
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