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dc.contributor.authorHuang, Y. P.en_US
dc.contributor.authorLiang, H. C.en_US
dc.contributor.authorHuang, J. Y.en_US
dc.contributor.authorSu, K. W.en_US
dc.contributor.authorLi, A.en_US
dc.contributor.authorChen, Y. F.en_US
dc.contributor.authorHuang, K. F.en_US
dc.date.accessioned2014-12-08T15:13:25Z-
dc.date.available2014-12-08T15:13:25Z-
dc.date.issued2007-09-01en_US
dc.identifier.issn0003-6935en_US
dc.identifier.urihttp://dx.doi.org/10.1364/AO.46.006273en_US
dc.identifier.urihttp://hdl.handle.net/11536/10365-
dc.description.abstractlnGaAs quantum wells and a Bragg mirror structure are grown on a GaAs substrate to simultaneously serve as a low-loss saturable absorber and an output coupler for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 946 nm. With an incident pump power of 9.2 W, the laser produces pulses of 38 ns duration with average pulse energy of as much as 20 mu J at a pulse repetition rate of 55 kHz. (c) 2007 Optical Society of America.en_US
dc.language.isoen_USen_US
dc.titleSemiconductor quantum-well saturable absorbers for efficient passive Q switching of a diode-pumped 946 nm Nd : YAG laseren_US
dc.typeArticleen_US
dc.identifier.doi10.1364/AO.46.006273en_US
dc.identifier.journalAPPLIED OPTICSen_US
dc.citation.volume46en_US
dc.citation.issue25en_US
dc.citation.spage6273en_US
dc.citation.epage6276en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000250266200009-
dc.citation.woscount2-
Appears in Collections:Articles


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