標題: | InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd : YAG laser at 1123 nm |
作者: | Huang, J. Y. Liang, H. C. Su, K. W. Lai, H. C. Chen, Y. -F. Huang, K. F. 電子物理學系 Department of Electrophysics |
公開日期: | 10-一月-2007 |
摘要: | A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123 nm. With an incident pump power of 16 W, an average output power of 3.1 W with a Q-switched pulse width of 77 ns at a pulse repetition rate of 100 kHz was obtained. (c) 2007 Optical Society of America. |
URI: | http://dx.doi.org/10.1364/AO.46.000239 http://hdl.handle.net/11536/11233 |
ISSN: | 0003-6935 |
DOI: | 10.1364/AO.46.000239 |
期刊: | APPLIED OPTICS |
Volume: | 46 |
Issue: | 2 |
起始頁: | 239 |
結束頁: | 242 |
顯示於類別: | 期刊論文 |