標題: InGaAs quantum-well saturable absorbers for a diode-pumped passively Q-switched Nd : YAG laser at 1123 nm
作者: Huang, J. Y.
Liang, H. C.
Su, K. W.
Lai, H. C.
Chen, Y. -F.
Huang, K. F.
電子物理學系
Department of Electrophysics
公開日期: 10-一月-2007
摘要: A low-loss semiconductor saturable absorber based on InGaAs quantum wells was developed for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 1123 nm. With an incident pump power of 16 W, an average output power of 3.1 W with a Q-switched pulse width of 77 ns at a pulse repetition rate of 100 kHz was obtained. (c) 2007 Optical Society of America.
URI: http://dx.doi.org/10.1364/AO.46.000239
http://hdl.handle.net/11536/11233
ISSN: 0003-6935
DOI: 10.1364/AO.46.000239
期刊: APPLIED OPTICS
Volume: 46
Issue: 2
起始頁: 239
結束頁: 242
顯示於類別:期刊論文


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