Semiconductor quantum-well saturable absorbers for efficient passive Q switching of a diode-pumped 946 nm Nd : YAG laser

doi:10.1364/AO.46.006273

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DC 欄位	值	語言
dc.contributor.author	Huang, Y. P.	en_US
dc.contributor.author	Liang, H. C.	en_US
dc.contributor.author	Huang, J. Y.	en_US
dc.contributor.author	Su, K. W.	en_US
dc.contributor.author	Li, A.	en_US
dc.contributor.author	Chen, Y. F.	en_US
dc.contributor.author	Huang, K. F.	en_US
dc.date.accessioned	2014-12-08T15:13:25Z	-
dc.date.available	2014-12-08T15:13:25Z	-
dc.date.issued	2007-09-01	en_US
dc.identifier.issn	0003-6935	en_US
dc.identifier.uri	http://dx.doi.org/10.1364/AO.46.006273	en_US
dc.identifier.uri	http://hdl.handle.net/11536/10365	-
dc.description.abstract	lnGaAs quantum wells and a Bragg mirror structure are grown on a GaAs substrate to simultaneously serve as a low-loss saturable absorber and an output coupler for highly efficient Q switching of a diode-pumped Nd:YAG laser operating at 946 nm. With an incident pump power of 9.2 W, the laser produces pulses of 38 ns duration with average pulse energy of as much as 20 mu J at a pulse repetition rate of 55 kHz. (c) 2007 Optical Society of America.	en_US
dc.language.iso	en_US	en_US
dc.title	Semiconductor quantum-well saturable absorbers for efficient passive Q switching of a diode-pumped 946 nm Nd : YAG laser	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1364/AO.46.006273	en_US
dc.identifier.journal	APPLIED OPTICS	en_US
dc.citation.volume	46	en_US
dc.citation.issue	25	en_US
dc.citation.spage	6273	en_US
dc.citation.epage	6276	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000250266200009	-
dc.citation.woscount	2	-
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