Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張翼 | en_US |
| dc.contributor.author | 許立翰 | en_US |
| dc.contributor.author | 胡志偉 | en_US |
| dc.contributor.author | 吳偉誠 | en_US |
| dc.contributor.author | 王景德 | en_US |
| dc.date.accessioned | 2014-12-16T06:12:39Z | - |
| dc.date.available | 2014-12-16T06:12:39Z | - |
| dc.date.issued | 2010-10-01 | en_US |
| dc.identifier.govdoc | H01L021/56 | zh_TW |
| dc.identifier.govdoc | H01L023/48 | zh_TW |
| dc.identifier.govdoc | H01L023/28 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103691 | - |
| dc.description.abstract | 本發明係提供一種高分子基板之高頻覆晶封裝製程及其結構，其係利用一階層之高頻覆晶封裝製程所封裝之結構，該結構可有效解決習用經由二階層之高頻覆晶封裝製程所製造之結構，其不僅在高頻特性上會帶來一額外之入射損耗與反射損耗，同時在應用上容易產生一可靠度問題、以及在該習用結構中之一陶瓷基板的製程良率上，仍存在有不佳及成本偏高等缺點。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 高分子基板之高頻覆晶封裝製程及其結構 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201036074 | zh_TW |
| Appears in Collections: | Patents | |
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