Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張翼 | en_US |
| dc.contributor.author | 唐士軒 | en_US |
| dc.contributor.author | 林岳欽 | en_US |
| dc.date.accessioned | 2014-12-16T06:12:43Z | - |
| dc.date.available | 2014-12-16T06:12:43Z | - |
| dc.date.issued | 2010-06-01 | en_US |
| dc.identifier.govdoc | H01L031/18 | zh_TW |
| dc.identifier.govdoc | H01L021/20 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103740 | - |
| dc.description.abstract | 本發明係在矽基板上成長矽鍺層，並在其上成長三五族化合物半導體太陽能電池。首先在矽晶片上使用矽離子佈植方法以促進矽晶片和矽鍺磊晶層的鬆弛，降低矽鍺磊晶層的厚度，再於矽基板上生長無應力的P型摻雜矽鍺緩衝層，藉以降低三五族高效率太陽能電池生產成本。並於矽鍺緩衝層上形成三五族高效率太陽能電池。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 於矽晶片上形成太陽能電池之矽鍺層的方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201021230 | zh_TW |
| Appears in Collections: | Patents | |
Files in This Item:
If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.
Loading...