Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 黃柏蒼 | en_US |
| dc.contributor.author | 劉文彥 | en_US |
| dc.contributor.author | 黃威 | en_US |
| dc.date.accessioned | 2014-12-16T06:12:53Z | - |
| dc.date.available | 2014-12-16T06:12:53Z | - |
| dc.date.issued | 2009-07-01 | en_US |
| dc.identifier.govdoc | G11C007/12 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103867 | - |
| dc.description.abstract | 一種應用於三元內容可定址記憶體漏電流截斷裝置,其於不同的操作模式下,控制高端與低端閘極電源電晶體之導通或截止以降低三元內容可定址記憶體無關項記憶胞之漏電流。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 三元內容可定址記憶體之漏電流超截斷裝置 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 200929247 | zh_TW |
| Appears in Collections: | Patents | |
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