Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 陳智 | en_US |
dc.contributor.author | 杜經寧 | en_US |
dc.contributor.author | 劉道奇 | en_US |
dc.date.accessioned | 2014-12-16T06:12:56Z | - |
dc.date.available | 2014-12-16T06:12:56Z | - |
dc.date.issued | 2014-04-01 | en_US |
dc.identifier.govdoc | C25D003/38 | zh_TW |
dc.identifier.govdoc | C25D007/12 | zh_TW |
dc.identifier.govdoc | H05K001/05 | zh_TW |
dc.identifier.govdoc | B82Y040/00 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/103897 | - |
dc.description.abstract | 本發明係有關於一種電鍍沉積之奈米雙晶銅金屬層、其製備方法、以及包含其之基板。本發明之電鍍沉積之奈米雙晶銅金屬層之50%以上的體積包括複數個晶粒,該複數個晶粒彼此間係互相連接,該每一晶粒係由複數個奈米雙晶沿著[111]晶軸方向堆疊而成,且相鄰之該晶粒間之堆疊方向之夾角係0至20度。本發明之電鍍沉積之奈米雙晶銅金屬層具有非常好的抗電遷移性、硬度以及楊式係數,可以大幅度的提升電子產品的可靠度。生產成本低且與半導體製程完全相容。 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | 電鍍沉積之奈米雙晶銅金屬層及其製備方法 | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | TWN | zh_TW |
dc.citation.patentnumber | I432613 | zh_TW |
Appears in Collections: | Patents |
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