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dc.contributor.author陳智en_US
dc.contributor.author杜經寧en_US
dc.contributor.author劉道奇en_US
dc.date.accessioned2014-12-16T06:12:56Z-
dc.date.available2014-12-16T06:12:56Z-
dc.date.issued2014-04-01en_US
dc.identifier.govdocC25D003/38zh_TW
dc.identifier.govdocC25D007/12zh_TW
dc.identifier.govdocH05K001/05zh_TW
dc.identifier.govdocB82Y040/00zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/103897-
dc.description.abstract本發明係有關於一種電鍍沉積之奈米雙晶銅金屬層、其製備方法、以及包含其之基板。本發明之電鍍沉積之奈米雙晶銅金屬層之50%以上的體積包括複數個晶粒,該複數個晶粒彼此間係互相連接,該每一晶粒係由複數個奈米雙晶沿著[111]晶軸方向堆疊而成,且相鄰之該晶粒間之堆疊方向之夾角係0至20度。本發明之電鍍沉積之奈米雙晶銅金屬層具有非常好的抗電遷移性、硬度以及楊式係數,可以大幅度的提升電子產品的可靠度。生產成本低且與半導體製程完全相容。zh_TW
dc.language.isozh_TWen_US
dc.title電鍍沉積之奈米雙晶銅金屬層及其製備方法zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumberI432613zh_TW
Appears in Collections:Patents


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