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DC Field | Value | Language |
---|---|---|
dc.contributor.author | 莊景德 | en_US |
dc.contributor.author | 楊皓義 | en_US |
dc.contributor.author | 林宜緯 | en_US |
dc.contributor.author | 黃威 | en_US |
dc.contributor.author | 石維強 | en_US |
dc.contributor.author | 陳家政 | en_US |
dc.date.accessioned | 2014-12-16T06:12:57Z | - |
dc.date.available | 2014-12-16T06:12:57Z | - |
dc.date.issued | 2014-03-21 | en_US |
dc.identifier.govdoc | G11C011/419 | zh_TW |
dc.identifier.uri | http://hdl.handle.net/11536/103919 | - |
dc.description.abstract | 本發明提供一種隨機存取記憶體,具有複數個記憶單元。在一實施例中,排列於同一直行的記憶單元耦接同一對位元線,並對應於同一電源電路。每一記憶單元中設有兩個反相器,電源電路則設有兩電力開關。針對同一直行的各個記憶單元,兩電力開關可依據位元線的電壓,也就是寫入操作時位元線之欲寫入資料,分別為各記憶單元中兩反相器進行獨立的供電控制。 | zh_TW |
dc.language.iso | zh_TW | en_US |
dc.title | 依據資料動態供電之隨機存取記憶體 | zh_TW |
dc.type | Patents | en_US |
dc.citation.patentcountry | TWN | zh_TW |
dc.citation.patentnumber | I431624 | zh_TW |
Appears in Collections: | Patents |
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