Wire-like characteristics in stacked InAs/GaAs quantum dot superlattices for optoelectronic devices

Abstract

The wire-like characteristics of stacked InAs/GaAs quantum dot (QDs) superlattices induced by the vertically electronic coupling effect were demonstrated by surface photovoltaic and photoluminescence measurements. It was found that the surface photovoltaic signal can be enhanced by up to more than 100 times due to the wire-like behavior along the growth direction. We also found that the emission from the cleaved edge surface is strongly anisotropic, which suggests a possibility of fine tuning the polarization by changing the spacer thickness. Additionally, the electroluminescence of stacked QDs near 1.3 mu m based on the wire-like characteristics has a much better performance than that of uncoupled QDs.