Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 張國明 | en_US |
| dc.contributor.author | 林俊銘 | en_US |
| dc.date.accessioned | 2014-12-16T06:13:16Z | - |
| dc.date.available | 2014-12-16T06:13:16Z | - |
| dc.date.issued | 2007-07-16 | en_US |
| dc.identifier.govdoc | H01L029/786 | zh_TW |
| dc.identifier.govdoc | H01L021/02 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/104069 | - |
| dc.description.abstract | 本發明提供堆疊式源/汲極複晶矽薄膜電晶體結構之製造方法,其簡化了習知製作堆疊式源/汲極複晶矽薄膜電晶體結構之光罩數量且可有效降低汲極附近的高電場並具有降低漏電電流的功效。本發明步驟包括:(1)將非晶矽層再結晶為複晶矽層(02)之步驟;先於基板上沈積一非晶矽層,再進行一般曝光微影以及利用RIE蝕刻技術以定義出具有高區間與低區間之非晶矽島狀物,其中蝕刻後之非晶矽薄通道區剩餘厚度約5-200nm,然後再進行退火以使該非晶矽層再結晶為複晶矽層(02);(2)定義閘極區(05)、源/汲極區(07)與通道區之步驟;(3)佈植步驟;以及(4)接線步驟。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 堆疊式源／汲極與薄通道之複晶矽薄膜電晶體結構，及其製作方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 200727486 | zh_TW |
| Appears in Collections: | Patents | |
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