Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 李承士 | en_US |
| dc.contributor.author | 張翼 | en_US |
| dc.contributor.author | 陳克弦 | en_US |
| dc.date.accessioned | 2014-12-16T06:13:16Z | - |
| dc.date.available | 2014-12-16T06:13:16Z | - |
| dc.date.issued | 2007-07-16 | en_US |
| dc.identifier.govdoc | H01L029/47 | zh_TW |
| dc.identifier.govdoc | H01L021/285 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/104070 | - |
| dc.description.abstract | 一種化合物半導體元件之銅金屬化之歐姆接觸電極,經過電子束蒸鍍沈積鈀(Pd)層、鍺(Ge)層及銅(Cu)層於化合物半導體元件上所組成,接著利用浮離製程(Lift-off)去除多餘之金屬及光阻,最後進行快速高溫退火過程而形成歐姆接觸電極。其中低電阻値之歐姆接觸電極係利用調整鈀層、鍺層及銅層之厚度及配合退火溫度而形成,可應用於銅金屬化製程,有效增加化合物半導體元件的散熱特性,且使生產成本降低。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 化合物半導體元件之銅金屬化之歐姆接觸電極 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 200727470 | zh_TW |
| Appears in Collections: | Patents | |
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