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dc.contributor.author韋光華en_US
dc.contributor.author周嘉宏en_US
dc.date.accessioned2014-12-16T06:13:17Z-
dc.date.available2014-12-16T06:13:17Z-
dc.date.issued2007-07-16en_US
dc.identifier.govdocC09K011/06zh_TW
dc.identifier.govdocH05B033/14zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104072-
dc.description.abstract本發明為提供可製成高分子發光二極體之奈米複材,而奈米複材是導入具表面改質之硫化鎘(量子點)於樹枝狀聚茀發光高分子而形成,並可有效地提升螢光發光效率及電激光效率,製成發光二極體元件後亦能增加元件之穩定性及電性。zh_TW
dc.language.isozh_TWen_US
dc.title以半導體量子點加強螢光效率之高分子發光二極體zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber200726822zh_TW
Appears in Collections:Patents


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