標題: Deep level transient spectroscopy depth profile measurements of polycrystalline zinc oxide ceramic
作者: Lee, WI
Young, RL
Chen, WK
交大名義發表
友訊交大聯合研發中心
National Chiao Tung University
D Link NCTU Joint Res Ctr
關鍵字: ZnO varistor;defect;deep level;DLTS;depth profile measurement
公開日期: 15-Sep-1996
摘要: A method is proposed for performing deep level transient spectroscopy depth profile measurements of defects in polycrystalline ZnO. A multilayer-chip ZnO varistor structure is adopted to minimize the number of grains connected in series. It is verified that the distributions of some defects near the ZnO grain boundary are highly nonuniform. Valuable information has been obtained from the measured defect distribution profiles.
URI: http://hdl.handle.net/11536/1040
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
Volume: 35
Issue: 9B
起始頁: L1158
結束頁: L1160
Appears in Collections:Articles