完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lee, WI | en_US |
dc.contributor.author | Young, RL | en_US |
dc.contributor.author | Chen, WK | en_US |
dc.date.accessioned | 2014-12-08T15:02:21Z | - |
dc.date.available | 2014-12-08T15:02:21Z | - |
dc.date.issued | 1996-09-15 | en_US |
dc.identifier.issn | 0021-4922 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/1040 | - |
dc.description.abstract | A method is proposed for performing deep level transient spectroscopy depth profile measurements of defects in polycrystalline ZnO. A multilayer-chip ZnO varistor structure is adopted to minimize the number of grains connected in series. It is verified that the distributions of some defects near the ZnO grain boundary are highly nonuniform. Valuable information has been obtained from the measured defect distribution profiles. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | ZnO varistor | en_US |
dc.subject | defect | en_US |
dc.subject | deep level | en_US |
dc.subject | DLTS | en_US |
dc.subject | depth profile measurement | en_US |
dc.title | Deep level transient spectroscopy depth profile measurements of polycrystalline zinc oxide ceramic | en_US |
dc.type | Article | en_US |
dc.identifier.journal | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | en_US |
dc.citation.volume | 35 | en_US |
dc.citation.issue | 9B | en_US |
dc.citation.spage | L1158 | en_US |
dc.citation.epage | L1160 | en_US |
dc.contributor.department | 交大名義發表 | zh_TW |
dc.contributor.department | 友訊交大聯合研發中心 | zh_TW |
dc.contributor.department | National Chiao Tung University | en_US |
dc.contributor.department | D Link NCTU Joint Res Ctr | en_US |
顯示於類別: | 期刊論文 |