氧化鋅變阻器及砷化鋁鎵的深能階暫態量測

Abstract

在磊晶成長半導體材料及製造半導體元件時，常常會因 質和晶體的不完 美，導致缺陷的產生，影響其電性 學性質，故對元件特性影響甚大。深 能階暫態量測前測量缺陷最普遍和靈敏度最高的方法。我們以自組的深能 階暫態量測系統，從事氧化鋅變阻砷化鋁鎵的缺陷研究。在氧化鋅變阻器 的深能階暫態中，發現添加氧化矽能提高T2這個缺陷的濃度，提高化鋅變 阻器的穩定性。而在砷化鋁鎵的深能階暫態量現在蕭基二極體中，量到少 數載子的缺陷。實驗中砷鎵添加磷用來消除與砷化鎵晶格常數的不同，磷 會在鋁鎵中形成抓電洞的缺陷，形成的缺陷也會隨著 Se量不同而有所不 同。 existence of defects is unavoidable in all semiconductorrials. Most defects are formed due to impurities or crystalrfections. Defects are important to device characteristicsuse they affect material optical and electronic characters .is the one of the most popular methods in characterizingcts.In our experiments,we make DLTS measurements of ZnOstor and AlGaAs + P epi-layers with using a home-madeem.In the ZnO varistor ,we found that the varistor stability,g with the T2 trap density,increases with increasingSiO2ent..In AlGaAs + P ，we discover that phosphorus, whichdded to eliminate lattice mismatch between AlGaAs and, will give rise to minority carrier traps.These traps,ed by phosphorus,will vary with the Se dopingentration.