標題: | Degradation phenomena of multilayer ZnO-glass varistors studied by deep level transient spectroscopy |
作者: | Wang, YP Lee, WI Tseng, TY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 16-九月-1996 |
摘要: | The degradation of non-Ohmic electrical characteristics of ZnO-glass chip varistors due to high-intensity impulse currents was correlated with the deep trap levels investigated by means of deep level transient spectroscopy. Three electron traps located at 0.11, 0.27, and 0.94 eV below the conduction band were observed for chip varistors before current impulse testing. These trap energy depths of the chip varistors after current impulse testing were found to be almost unchanged, but their trap densities and capture cross sections both decreased. The concentration of the trap at 0.94 eV was decreased and ascribed to oxygen vacancies existing at the grain boundaries of the varistor. The electrical degradation phenomenon of the chip varistors is closely related to the reaction between the trap at 0.94 eV and adsorbed oxygen ions at the grain boundaries. (C) 1996 American Institute of Physics. |
URI: | http://hdl.handle.net/11536/1039 |
ISSN: | 0003-6951 |
期刊: | APPLIED PHYSICS LETTERS |
Volume: | 69 |
Issue: | 12 |
起始頁: | 1807 |
結束頁: | 1809 |
顯示於類別: | 期刊論文 |