標題: Deep level transient spectroscopy depth profile measurements of polycrystalline zinc oxide ceramic
作者: Lee, WI
Young, RL
Chen, WK
電子物理學系
Department of Electrophysics
關鍵字: ZnO varistor;defect;deep level;DLTS;depth profile measurement
公開日期: 15-九月-1996
摘要: A method is proposed for performing deep level transient spectroscopy depth profile measurements of defects in polycrystalline ZnO. A multilayer-chip ZnO varistor structure is adopted to minimize the number of grains connected in series. It is verified that the distributions of some defects near the ZnO grain boundary are highly nonuniform. Valuable information has been obtained from the measured defect distribution profiles.
URI: http://dx.doi.org/10.1143/JJAP.35.L1158
http://hdl.handle.net/11536/149319
ISSN: 0021-4922
DOI: 10.1143/JJAP.35.L1158
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume: 35
顯示於類別:期刊論文