標題: | Phosphorus vacancy as a deep level in AlInP layers |
作者: | Sung, WJ Wu, YR Lee, SC Wen, TC Li, TJ Chang, JT Lee, WI 友訊交大聯合研發中心 D Link NCTU Joint Res Ctr |
關鍵字: | AlInP;phosphorus vacancy;defect;deep level;DLTS;depth profile measurement |
公開日期: | 15-六月-2000 |
摘要: | Deep levels in AlInP layers, grown by metal-organic chemical vapor deposition (MOCVD) with various V/III mole ratios, have been carefully investigated by deep-level transient spectroscopy (DLTS). A deep level originating from phosphorus vacancy was observed with the activation energy of 0.65 eV. Examining this phosphorus-vacancy-related deep level provided a relatively simple means of understanding the phosphorus vacancy in AlInP, thus allowing us to determine an appropriate V/III mole ratio for growing AlInP. |
URI: | http://dx.doi.org/10.1143/JJAP.39.L567 http://hdl.handle.net/11536/30462 |
ISSN: | 0021-4922 |
DOI: | 10.1143/JJAP.39.L567 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS |
Volume: | 39 |
Issue: | 6B |
起始頁: | L567 |
結束頁: | L568 |
顯示於類別: | 期刊論文 |