Phosphorus vacancy as a deep level in AlInP layers

doi:10.1143/JJAP.39.L567

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Sung, WJ	en_US
dc.contributor.author	Wu, YR	en_US
dc.contributor.author	Lee, SC	en_US
dc.contributor.author	Wen, TC	en_US
dc.contributor.author	Li, TJ	en_US
dc.contributor.author	Chang, JT	en_US
dc.contributor.author	Lee, WI	en_US
dc.date.accessioned	2014-12-08T15:45:12Z	-
dc.date.available	2014-12-08T15:45:12Z	-
dc.date.issued	2000-06-15	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://dx.doi.org/10.1143/JJAP.39.L567	en_US
dc.identifier.uri	http://hdl.handle.net/11536/30462	-
dc.description.abstract	Deep levels in AlInP layers, grown by metal-organic chemical vapor deposition (MOCVD) with various V/III mole ratios, have been carefully investigated by deep-level transient spectroscopy (DLTS). A deep level originating from phosphorus vacancy was observed with the activation energy of 0.65 eV. Examining this phosphorus-vacancy-related deep level provided a relatively simple means of understanding the phosphorus vacancy in AlInP, thus allowing us to determine an appropriate V/III mole ratio for growing AlInP.	en_US
dc.language.iso	en_US	en_US
dc.subject	AlInP	en_US
dc.subject	phosphorus vacancy	en_US
dc.subject	defect	en_US
dc.subject	deep level	en_US
dc.subject	DLTS	en_US
dc.subject	depth profile measurement	en_US
dc.title	Phosphorus vacancy as a deep level in AlInP layers	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1143/JJAP.39.L567	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS	en_US
dc.citation.volume	39	en_US
dc.citation.issue	6B	en_US
dc.citation.spage	L567	en_US
dc.citation.epage	L568	en_US
dc.contributor.department	友訊交大聯合研發中心	zh_TW
dc.contributor.department	D Link NCTU Joint Res Ctr	en_US
dc.identifier.wosnumber	WOS:000088393100005	-
dc.citation.woscount	1	-
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