摻雜磷化鋁鎵銦之研究：材料成長及缺陷分析

Abstract

磷化鋁鎵銦被廣泛地運用在光電元件上。因為深能階缺陷會形成復合中心， 如果在磷化鋁鎵銦的材料中存在缺陷，元件的的效率將會明顯的降低。因此我們在本論文廣泛的研究存在碲及鎂摻雜的磷化鋁鎵銦中的缺陷。我們使用有機金屬氣相磊晶法成長磷化鋁鎵銦並且用深能階暫態量測法來研究存在磷化鋁鎵銦中的缺陷。用有機金屬氣相磊晶法成長磷化鋁鎵銦中都會有磷空缺的本質缺陷存在。我們也在本論文中探討五三比及磷空缺的關係。 在碲摻雜的磷化鋁銦中找到兩個新的深能階缺陷，一個會捕捉多數載子，另一個會捕捉少數載子。兩者的活化能分別是0.24及0.25電子伏特。兩者都是和摻雜有關的缺陷。都屬於材料缺陷而非介面缺陷。 在碲摻雜的磷化鋁鎵銦中找到一個會捕捉多數載子的深能階缺陷，其活化能為0.13電子伏特。缺陷濃度和鋁含量有關。在磷化鋁銦及磷化鎵銦中都量測不到這個缺陷。在碲摻雜的磷化鋁銦中找到的深能階缺陷在鋁含量小於0.5時也量測不到。 在碲摻雜的磷化鋁銦中找到一個和磷空缺有關係的深能階缺陷。這一個深能階缺陷會捕捉多數載子且其活化能為0.65電子伏特。是屬於材料缺陷而非介面缺陷。 在鎂摻雜的磷化鋁銦中找到兩個新的深能階缺陷，兩個都會捕捉少數載子。兩者的活化能分別是0.19及0.514電子伏特。兩者都是和摻雜有關的缺陷。都屬於材料缺陷而非介面缺陷。

The AlGaInP alloys are widely used in optoelectron devices. Because the deep level defects could be a recombination center, the device efficiencies will significantly reduce if the defects exist in the AlGaInP devices. The information of the deep level defects in the Te- and Mg-doped AlGaInP are very limited. Thus, we widely study the defects in the Te- and Mg-doped AlGaInP in the thesis. We grew doped AlGaInP alloys by the OMVPE technique and used the DLTS to explore the defects in AlGaInP alloys. The phosphorus vacancies are the native defects in AlInP grown by MOCVD. We also used the DLTS to study the relationship between the V/III mole ratio and defects as phosphorous vacancies in the thesis. Two new deep level traps were found in the Te-doped AlInP. One is a majority-carrier trap while the other is a minority-carrier trap. The activation energies of those traps are 0.24eV and 0.25eV respectively. Both are dopant related defects and are bulk defects, rather than interface defects. A new majority trap was found in Te-doped AlGaInP alloy herein. The activation energy of this trap is 0.13eV, and the trap concentration strongly depends on the Al composition. This trap is undetectable at AlInP and GaInP. The concentration of the trap, which was found in the Te-doped AlInP layer, is undetectable when the Al composition is below half i.e. x < 0.5. A phosphorous vacancy related trap had been found in the Te-doped AlInP. The trap is a majority-carrier trap and is a kind of bulk defect, rather than an interface defect. The activation energy of this trap is 0.65eV. Two new deep level traps were found in the Mg-doped AlInP. Both are minority-carrier traps. The activation energies of those traps are 0.19eV and 0.514eV, respectively. Both are dopant related defects and are bulk defects rather than being interface defects.