標題: | Thermal-treatment induced deep electron traps in AlInP |
作者: | Sung, WJ Huang, KF Lin, WJ Tseng, TY 電子物理學系 Department of Electrophysics |
關鍵字: | AlInP;annealing;thermal-treatment;defect;deep level;phosphorus vacancy;DLTS |
公開日期: | 1-八月-2001 |
摘要: | The effects of thermal treatment on the quality of AlInP film, grown by metal-organic chemical vapor deposition (MOCVD), have been carefully investigated using deep level transient spectroscopy (DLTS). Two thermal-treatment-induced deep levels were observed in the samples thermal-treated above 500 degreesC and shall be attributed to the generation of phosphorus vacancies (V-p) by evaporation of phosphorus from AlInP surface. Examination of these deep levels provided a relatively simple means of understanding the thermal-treatment-induced behavior, thus allowing us to determine an appropriate process for manufacturing AlInP-based products. |
URI: | http://hdl.handle.net/11536/29484 |
ISSN: | 0021-4922 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
Volume: | 40 |
Issue: | 8 |
起始頁: | 4864 |
結束頁: | 4865 |
顯示於類別: | 期刊論文 |