標題: Thermal-treatment induced deep electron traps in AlInP
作者: Sung, WJ
Huang, KF
Lin, WJ
Tseng, TY
電子物理學系
Department of Electrophysics
關鍵字: AlInP;annealing;thermal-treatment;defect;deep level;phosphorus vacancy;DLTS
公開日期: 1-八月-2001
摘要: The effects of thermal treatment on the quality of AlInP film, grown by metal-organic chemical vapor deposition (MOCVD), have been carefully investigated using deep level transient spectroscopy (DLTS). Two thermal-treatment-induced deep levels were observed in the samples thermal-treated above 500 degreesC and shall be attributed to the generation of phosphorus vacancies (V-p) by evaporation of phosphorus from AlInP surface. Examination of these deep levels provided a relatively simple means of understanding the thermal-treatment-induced behavior, thus allowing us to determine an appropriate process for manufacturing AlInP-based products.
URI: http://hdl.handle.net/11536/29484
ISSN: 0021-4922
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 40
Issue: 8
起始頁: 4864
結束頁: 4865
顯示於類別:期刊論文


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