標題: | Deep level transient spectroscopy depth profile measurements of polycrystalline zinc oxide ceramic |
作者: | Lee, WI Young, RL Chen, WK 交大名義發表 友訊交大聯合研發中心 National Chiao Tung University D Link NCTU Joint Res Ctr |
關鍵字: | ZnO varistor;defect;deep level;DLTS;depth profile measurement |
公開日期: | 15-九月-1996 |
摘要: | A method is proposed for performing deep level transient spectroscopy depth profile measurements of defects in polycrystalline ZnO. A multilayer-chip ZnO varistor structure is adopted to minimize the number of grains connected in series. It is verified that the distributions of some defects near the ZnO grain boundary are highly nonuniform. Valuable information has been obtained from the measured defect distribution profiles. |
URI: | http://hdl.handle.net/11536/1040 |
ISSN: | 0021-4922 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS |
Volume: | 35 |
Issue: | 9B |
起始頁: | L1158 |
結束頁: | L1160 |
顯示於類別: | 期刊論文 |