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dc.contributor.author張翼en_US
dc.contributor.author張尚文en_US
dc.contributor.author李承士en_US
dc.date.accessioned2014-12-16T06:13:26Z-
dc.date.available2014-12-16T06:13:26Z-
dc.date.issued2006-10-16en_US
dc.identifier.govdocH01L021/8258zh_TW
dc.identifier.govdocH01L021/8258zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/104147-
dc.description.abstract本發明係為一具銅金屬化之複合物半導體元件,結構為異質接面雙載子電晶體(HBT)結構,當基板為砷化鎵基板時,其歐姆接觸層之材料為鈀/鍺/氮化鎢/銅或鉑/鈦/鉑/銅,而金屬連接線為鈦/鉑/銅;若基板為磷化銦基板時,歐姆接觸層之材料為鈦/鉑/銅或鉑/鈦/鉑/銅,金屬連接線為鈦/鉑/銅,藉由具有較佳散熱特性之銅取代金,可增加其散熱效果,進而增加元件的可靠度。zh_TW
dc.language.isozh_TWen_US
dc.title具銅金屬化之複合物半導體元件zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumber200636934zh_TW
Appears in Collections:Patents


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