Low Turn-On Voltage and High Focus Capability for Field Emission Display

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Kuo, Yi-Ting	en_US
dc.contributor.author	Lo, Hsiang-Yu	en_US
dc.contributor.author	Li, Yiming	en_US
dc.date.accessioned	2014-12-08T15:02:22Z	-
dc.date.available	2014-12-08T15:02:22Z	-
dc.date.issued	2008	en_US
dc.identifier.isbn	978-1-4200-8505-1	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1041	-
dc.description.abstract	In this work, the properties of low turn-on voltage and high focused capability for novel field emission display are studied. According to the development of novel structure for surface conduction electron-emitter provided by Tsai et al, the 3D FTDT-PIC method has been used to analyze the properties of this device. We can find the novel structure having a tip around the corner on the left electrode implies that it can produce high electric fields around the emitter apex, and generate high emission current.	en_US
dc.language.iso	en_US	en_US
dc.subject	low turn-on voltage	en_US
dc.subject	high focus capability	en_US
dc.subject	field emission display	en_US
dc.subject	nanogap	en_US
dc.subject	FDTD-PIC	en_US
dc.title	Low Turn-On Voltage and High Focus Capability for Field Emission Display	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	NSTI NANOTECH 2008, VOL 3, TECHNICAL PROCEEDINGS	en_US
dc.citation.spage	88	en_US
dc.citation.epage	91	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.identifier.wosnumber	WOS:000272170200024	-
顯示於類別：	會議論文