Full metadata record
DC FieldValueLanguage
dc.contributor.authorChang, Chia-Haoen_US
dc.contributor.authorChien, Chao-Hsinen_US
dc.contributor.authorYang, Jung-Yenen_US
dc.date.accessioned2014-12-08T15:13:29Z-
dc.date.available2014-12-08T15:13:29Z-
dc.date.issued2007-08-20en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.2771532en_US
dc.identifier.urihttp://hdl.handle.net/11536/10423-
dc.description.abstractIn this letter, the authors propose a practical and reliable approach-using deposited multiwalled carbon nanotubes (MWCNTs) as source and drain electrodes-for reducing the contact resistance (R-c) in pentacene-based bottom-contact thin-film transistors. The value of R-c of the devices was closely linked to the resultant length of the deposited MWCNTs; the lowest value was 3x10(8) Omega mu m. The largest saturation mobility was 0.14 cm(2)/V s; this value reached up to three times higher when the threshold voltage was determined using the maximum transconductance (G(m,max)) extrapolation method, rather than the constant current method. The on/off ratio was more than 10(6). (C) 2007 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titlePentacene-based thin-film transistors with multiwalled carbon nanotube source and drain electrodesen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.2771532en_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume91en_US
dc.citation.issue8en_US
dc.citation.epageen_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000248984800092-
dc.citation.woscount17-
Appears in Collections:Articles


Files in This Item:

  1. 000248984800092.pdf

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.