完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chang, Chia-Hao | en_US |
dc.contributor.author | Chien, Chao-Hsin | en_US |
dc.contributor.author | Yang, Jung-Yen | en_US |
dc.date.accessioned | 2014-12-08T15:13:29Z | - |
dc.date.available | 2014-12-08T15:13:29Z | - |
dc.date.issued | 2007-08-20 | en_US |
dc.identifier.issn | 0003-6951 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1063/1.2771532 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/10423 | - |
dc.description.abstract | In this letter, the authors propose a practical and reliable approach-using deposited multiwalled carbon nanotubes (MWCNTs) as source and drain electrodes-for reducing the contact resistance (R-c) in pentacene-based bottom-contact thin-film transistors. The value of R-c of the devices was closely linked to the resultant length of the deposited MWCNTs; the lowest value was 3x10(8) Omega mu m. The largest saturation mobility was 0.14 cm(2)/V s; this value reached up to three times higher when the threshold voltage was determined using the maximum transconductance (G(m,max)) extrapolation method, rather than the constant current method. The on/off ratio was more than 10(6). (C) 2007 American Institute of Physics. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Pentacene-based thin-film transistors with multiwalled carbon nanotube source and drain electrodes | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1063/1.2771532 | en_US |
dc.identifier.journal | APPLIED PHYSICS LETTERS | en_US |
dc.citation.volume | 91 | en_US |
dc.citation.issue | 8 | en_US |
dc.citation.epage | en_US | |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000248984800092 | - |
dc.citation.woscount | 17 | - |
顯示於類別: | 期刊論文 |